Nexus Plaminar | Nexusbe High-speed Spatial ALD System Solution

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Nexus Plaminar

Nexus PLAMINAR Series

Compact, Cost-effective, and High-quality ALD System for R&D via Thermal or Plasma Activation

S-Series

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L-Series

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Batch Type ALD Batch-type atomic layer deposition

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Roll to Roll ALD Roll-to-roll atomic layer deposition

Continuous roll deposition → high-speed, high-volume thin-film coating
Coating of flexible substrates such as PI, PET, and PEN films (High WVTR performance)
Targeting the high-value, high-quality flexible display film market
Surface coating treatment for cathode and anode materials of secondary batteries

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Item	Description
Reaction Type	Plasma (O2, N2, NH3, H2) & Thermal (DIW)
Substrate Size	8 inch (200mm)
Substrate Access	Using Loadlock Loading
Dimension(W x L x H)	880 x 1880 x 1794 mm
Weight	< 500 kg
Uniformity	≤ ± 2 % (Within 25 point EE15 mm, Wafer to Wafer)
Cycle time	≤ 10 sec/Cycle
Growth Per Cycle	≤ 1.2 Å/Cycle
Deposition Rate	≥ 7 Å/min (Ref, Al2O3)
Plasma Power Source (LP-200 Model)	RF 13.56 MHz, CCP Type, 600 W
Base Pressure	≤ 5.0 x 10-3 Torr (≤ 5 min)
Process Pressure	0.5 ~ 2 Torr
Substrate Temperature	Max. 400 ℃, ≤ ±1 % (On Set Temp)
Materials	Chamber: Al6061 / Heater: Al Block Heater
Gas Box	Source Canister (3 set) Reactant Canister (1 set_DIW) Reactant Gas Line (2 set_O2, N2, or NH3)
Available Deposition Film	Metal Oxide by O2 Plasma / DIW / O2 Metal Nitride by NH3, N2, H2 Plasma Metal by H2 Plasma
O3 Generator (Option)	210 g/m3, 2 L/min
Vacuum Gauge	Baratron Gauge (<10 Torr)
Pump Type	Dry Pump: (>1,500 LPM)
ETC	By-pass Line at each Feeding Line
ETC	Laptop Notebook Control

Item	Description
Chamber Type	Lateral Type (Traveling wave)
Reaction Type	LT-200 : Thermal / LP-200 : Plasma & Thermal
Substrate Size	8 inch (200 mm)
Substrate Access	LT-200/LP-200 : By Manual Loading LP-200/LP-200L : Using Loadlock
Dimension(W x L x H)	780 x 1380 x 1496 mm
Weight	< 500 kg
Uniformity	≤ ±2 % (Within 25 point EE15 mm, Wafer to Wafer)
Cycle time	≤ 10 sec/Cycle
Growth Per Cycle	≤ 1.2 Å/Cycle
Deposition Rate	≥ 7 Å/min (Ref, Al2O3)
Plasma Power Source (LP-200 Model)	RF 13.56 MHz, CCP Type, 600 W
Base Pressure	≤ 5.0 x 10-3 Torr (≤ 5 min)
Process Pressure	0.5 ~ 2 Torr
Substrate Temperature	Max. 400 ℃, ≤ ±1 % (On Set Temp)
Materials	Chamber: Al6061 / Heater: Al Block Heater
Gas Box	Source Canister (3 set) Reactant Canister (1 set_DIW) Reactant Gas Line (2 set_O2, N2, or NH3)
Available Deposition Film	Metal Oxide by O2 Plasma / DIW / O2 Metal Nitride by NH3, N2, H2 Plasma Metal by H2 Plasma
O3 Generator (Option)	220 g/m3, 2 L/min
Vacuum Gauge	Baratron Gauge (<10 Torr)
Pump Type	Dry Pump: (>1,000 LPM)
ETC	By-pass Line at each Feeding Line / Laptop Notebook Control

Item	Description
Chamber Type	Square & Showerhead
Uniformity	In Wafer ( 8" Wafer. : ≤ 5 % )
Cycle Time	≤ 30 sec (1 Cycle)
Growth Per Cycle	0.9 Å / Cycle
Deposition Rate	약 2 Å/min (Ref. : Al2O3)
Tact Time (@10 nm/1PM)	≤ 60 min (Only Process Time)
Base Pressure	≤ 5.0 x 10-3 Torr (≤ 20 min)
Process Pressure	0.5 ~ 2 Torr
Substrate Temperature	Max. 250 ℃, (On Set Temp)
Materials	Chamber: SUS. Heater: IR Lamp Heater
Gas Box	Source Canister (1 set) Process Gas Line (3 set_O3) MFC: Max. 10,000 sccm
O3 Generator	210 g/m3, 2 L/min
Vacuum Gauge	ATM Switch Baratron Gauge (<10 Torr) Convectron Gauge (≤1000 Torr)
Pump Type	Dry Pump: (>30,000 L/min)

Item	Description
Process Type	Spatial Divided ALD & Roll-to-Roll
Substrate	Flexible Roll Substrate ( PET, PEN Etc )
Uniformity	300 mm Roll Width : ≤ 5 %
Line Speed	Max. 210 g/m3, 2 L/min
Tension	Max. 20 kgf
Number of Canister	Bubbler or By-Pass type canister 3 EA
Gas Box	N2, Ar, O2 MFC : ≥ 1,000 sccm
Reactant	H2O (Using DIW), O3 (Using O3 Generator)
Scan / Cycle	1 Scan / 4 Cycle
Number of gas bar in injector	Precursor : 4 places Reactant : 5 places Center purge : 10 places Side purge : 2 places
Gases Flow Type	Injector flow(vertical direction) and top pumping
Base Pressure	≤ 5.0x10-3 Torr ( ≤ 20 min )
Process Pressure	0.5 ~ 2 Torr
Substrate Temperature	60~100 ℃ (Max. 150 ℃ on Set Temp.) Heating Type : Heater Block and Heat Exchanger
Materials	Chamber : SUS. 및 Al
Vacuum Gauge	ATM Switch Baratron Gauge( ≤10 Torr ) Convectron or Baratron Gauge (≤ 1000 Torr )
Pump Type	Dry Pump : (≥10,000 L/min)