Spatial ALD, Temporal ALD | Nexusbe Nexus-T-Max High-Efficiency System

Product

Nexus T-Max

Temporal Division ALD for Semiconductors

Precise Deposition of Single/Multi-layer Thin Films with Impurity-Free Quality

- Prevention of Cross-mixing Between Precursors by Applying Multiple Showerheads
- Application of Hybrid System Through Interworking with Other Deposition Systems
- Precise thickness control for single or multi-layer oxide, nitride, and metal thin films

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Enhancing deposition quality for
high-grade single/multi-layer thin films through multi-showerhead integration

Temporal Division ALD for Display (2in1)

High productivity via simultaneous dual-substrate processing (2-in-1 system)

- Improved process speed and efficiency
- Securing physical production footprint with significantly enhanced hourly throughput
- High productivity and precise thin film formation

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Enabling Next-Generation High-Quality, High-Throughput Display Processing
with Advanced Spatial ALD Technology

Item	Description
Chamber Type	Showerhead Type
Reaction Type	Plasma (O2, N2, NH3, H2) & Thermal (DIW, O3)
Substrate Size	12 inch (300 mm)
Substrate Access	Using Loadlock
Uniformity	≤ ±2 % (Within 25 point EE15 mm) ≤ ±1 % (Wafer to Wafer)
Cycle Time	≤ 5 sec/Cycle
Growth Per Cycle	≤ 1.2Å/Cycle
Deposition Rate	≥ 15Å/min (Ref, Al2O3)
Tact Time (@50 nm/1PM)	≤ 37 min (Loading to Unloading)
Plasma Power Source	RF 13.56 MHz, CCP Type, 1,000 W
Base Pressure	≤ 5.0 x 10-3 Torr (≤ 5 min)
Process Pressure	0.5 ~ 2 Torr
Substrate Temperature	Max. 400 ℃, ≤ ±1 % (On Set Temp.)
Materials	Chamber : Al6061 / Heater : Al or SUS Block Heater
Gas Box	Source Canister (4 set) Reactant Canister (1 set_DIW) Reactant Gas Line (5 set_O2, H2, N2, NH3)
Available Deposition Film	Metal Oxide by O2 Plasma / DIW / O3 Metal Nitride by NH3, N2, H2 Plasma Metal by H2 Plasma
O3 Generator (Option)	210 g/m3, 2 L/min
Vacuum Gauge	Baratron Gauge (<10 Torr)
Pump Type ETC	Dry Pump (>20,000 LPM)
ETC	By-pass Line at each Feeding Line / Laptop Control

Item		Description
Dimension (Width × Length × Height)		2500 mm × 1490 mm × 1600 mm
Gas Injection Type		Showerhead Flow
Chamber Material & Finishing		Al6061, Hard anodizing (40 ㎛)
Susceptor	Capability	Temperature : RT ~ 350 ℃
	Uniformity	± ≤ 1% @ Set point
	Material	Al6061
	Life time	≥ 1 year
Temperature Control	Chamber wall	Max 120 ℃
	Showerhead	Max 150 ℃
	Gas line	Max 150 ℃
	Pumping line	Max 150 ℃
Vacuum Performance	Ultimate Pressure	≤ 10 mTorr
Vacuum Performance	Leak Rate	≤ 2 mTorr/min